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	Buried semiconductor laser
	SUGIMOTO MITSUNORI
	1983-02-24
著作权人	NIPPON ELECTRIC CO
专利号	JP1983031592A
国家	日本
文献子类	发明申请
其他题名	Buried semiconductor laser
英文摘要	PURPOSE:To obtain a buried semiconductor laser capable of operating at high power and high temperature with extremely small leakage current by forming semiconductor layers having a forbidden band width smaller than that of a current block layer at both sides of an active layer. CONSTITUTION:A lower clad layer 31, an active layer 32, an upper clad layer 33 and a cap layer 34 are formed by a liquid phase epitaxial technique on an N type InP substrate 30. Then, the layers 34, 33, 32 are striped by photoetching with an SiO2 film or the like as a mask. Thereafter, an InGaAsP layer 35, a current block layer 36, a buried layer 37 and an N type InGaAsP layer 38 are formed by a liquid phase epitaxial technique. Since the layer 35 has a forbidden band width narrower than a current block layer (P type InP) 36, the gain of an N-P-N transistor 43 is lowered. Accordingly, even if a gate current IG flows, the P-N-P-N structure is not turned ON, and the leakage current IL can be set substantially to zero.
公开日期	1983-02-24
申请日期	1981-08-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78281]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	SUGIMOTO MITSUNORI. Buried semiconductor laser. JP1983031592A. 1983-02-24.

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