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	Semiconductor light emitting device
	WAKAO KIYOHIDE; TAKAGI NOBUYUKI
	1983-06-18
著作权人	FUJITSU KK
专利号	JP1983102588A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To provide a semiconductor laser characterized by a low oscillation threshold current and high differential quantum efficiency, by laminating an optical guide layer on at least one side of an active layer. CONSTITUTION:A positive voltage is applied to an electrode 23 and a negative voltage is applied to an electrode 24. Carriers are injected into the active layer 19 and light emission is obtained by recombination. The carriers injected into the active layer 19 are confined by semiconductor layers 17, 18, 20, and 21 in the direction of a film thickness. The laser light generated by the active layer 19 is infiltrated into both an N type optical guide layer 18 and a P type optical guide layer 20 and guided by the clad layers 17 and 21 whose refractive index is low. Said laser light is propagated in the active layer 19 and the optical guide layers 18 and 20 and combined with epitaxial layers 12, 13, and 14. The light guided in the active layer 19 and the optical guide layers 18 and 20 are again guided in the core layer 13 by the clad layers 12 and 14 and resonated between cleavage planes.
公开日期	1983-06-18
申请日期	1981-12-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78239]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	WAKAO KIYOHIDE,TAKAGI NOBUYUKI. Semiconductor light emitting device. JP1983102588A. 1983-06-18.

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