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	Manufacture of semiconductor light-emitting element
	YUASA TSUNAO
	1982-11-22
著作权人	NIPPON DENKI KK
专利号	JP1982190389A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor light-emitting element
英文摘要	PURPOSE:To bring the surface of the block layer coincided with the active layer accurately for the titled element by a method wherein the undoped active layer formed on a semiconductor substrate is divided into a plurality of mesa structures and they are cut into pieces after they have been surrounded by the doped semiconductor layer. CONSTITUTION:An N type InP layer 9, an undoped InGaAsP active layer 10, and a P type InP layer 11 are laminated and epitaxially grown in liquid phase on an N InP substrate 8, an oxide film 12 is coated on the above, and a stripe- shaped film is formed by performing repeated photo etchings in assorted widths of 50, 5-10, and 50mum. Subsequently, a mesa etching is performed using the above as a mask, and mesa structures 14-16 are formed. Then, the film 12 is removed, and a P type InP layer 13 is formed on the whole surface while burying all mesa grooves, a stripe-shaped oxide film 17 is provided on the mesa structure 15, and the layer 13 located on both sides of the mesa structure 15 is removed by performing an etching using the solution which selects InP only. Then, the mesa structure 15 is surrounded by an N type InP layer 19, and each mesa structure is cut off.
公开日期	1982-11-22
申请日期	1981-05-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78119]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	YUASA TSUNAO. Manufacture of semiconductor light-emitting element. JP1982190389A. 1982-11-22.

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