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	Semiconductor laser
	OMURA ETSUJI
	1990-10-29
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990264487A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser device which is high in performance and adapted for integration by a method wherein an AlGaAs layer forms an inverted bias junction in a leakage current path for shutting off the leakage current so as to lessen the threshold current of the laser device. CONSTITUTION:As the end of an n-type diffusion region 105 inside a p-AlGaAs clad layer 104, the end of a p-type diffusion region 106 inside an n-AlGaAs clad layer 102, and a p-AlGaAs layer 110 constitute an AlGaAs junction of high potential barrier, when an element is normally biased, a current hardly flows. When the element is normally biased, a junction between a denaturalized layer 107 and the layer 110 is inversely biased, a current is not able to flow through the denaturalized layer 107 of n-GaAs. Therefore, a current is effectively injected into only a region 302 through a part of low potential barrier between the active region 302 and the layer 102 and a junction between the active region 302 and the end of the n-type diffusion region 105, so that a low threshold current can be realized. That is, only an AlGaAs layer forms a reversely biased junction in a leakage current path to shut off the leakage current.
公开日期	1990-10-29
申请日期	1989-04-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78114]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	OMURA ETSUJI. Semiconductor laser. JP1990264487A. 1990-10-29.

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