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	半導体レーザの製造方法
	阿部 雄次; 杉本 博司; 大塚 健一; 大石 敏之; 松井 輝仁
	1995-01-30
著作权人	三菱電機株式会社
专利号	JP1995007862B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザの製造方法
英文摘要	PURPOSE:To form the embedded layer of an embedded type semiconductor laser element simply and efficiently, by introducing etching gas into a vapor phase epitaxy apparatus, and etching a semiconductor substrate. CONSTITUTION:An InGaAsP active layer 2, an N-type InP clad layer 3 and a patterning mask 4 for a nitride film are formed on a P-type InP substrate Thereafter, the substrate 1 is mounted on a holder 9 in a reacting tube 5 in a vapor phase epitaxy apparatus. A cover 10 is closed, and the substrate 1 is shut off from the atmosphere in the tube 5. Thereafter, the temperature of the substrate 1 and an In source part 8 is increased. Specified H2 gas is introduced into the tube 5 through introducing devices 6 and 7 and a pipe 15. Thus, an InP epitaxial layer is grown on the substrate. Then, the tube 5 is pervaded with an etching atmosphere by HCl gas from a cylinder 14a. The cover 10 is opened. The substrate 1 undergoes mesa etching through the mask 4. Thereafter, a valve 17 is closed, and of the tube 5 is pervaded with an epitaxial growing atmosphere. The cover 10 is opened. An InP embedded layer 13 is epitaxially grown in the mesa-etched substrate in the atmosphere in the tube 5.
公开日期	1995-01-30
申请日期	1988-01-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77927]
专题	半导体激光器专利数据库
作者单位	三菱電機株式会社
推荐引用方式 GB/T 7714	阿部 雄次,杉本 博司,大塚 健一,等. 半導体レーザの製造方法. JP1995007862B2. 1995-01-30.

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