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	Bistable semiconductor laser
	ODAKAWA TETSUSHI; YAMAGOSHI SHIGENOBU
	1990-02-28
著作权人	FUJITSU LTD
专利号	JP1990060182A
国家	日本
文献子类	发明申请
其他题名	Bistable semiconductor laser
英文摘要	PURPOSE:To enable the control of the relation between the wavelength of a set light and the resonating wavelength so as to make the set light small in intensity by a method wherein a resonator length control layer is provided onto a lower clad layer being in contact with an active layer formed thereon, and the optical waveguides of them are provided to the same axis. CONSTITUTION:An active layer 22 consisting of a second semiconductor layer, whose a forbidden bandwidth is larger than that of a first semiconductor, is provided onto a region of the surface of a lower clad layer 21 which consists of the first semiconductor of a certain conductivity type, and a resonator length control layer 28 consisting of a third semiconductor layer, whose forbidden bandwidth is larger than that of the second semiconductor, is provided onto the other region of the surface of the clad layer 31 touching the other region. Next, a first upper clad layer 23 consisting of a fourth semiconductor layer, whose forbidden bandwidth is smaller than that of the second semiconductor, is formed on the active layer 22, and a second upper clad layer 29 consisting of a fifth semiconductor layer, whose forbidden bandwidth is smaller than that of the third semiconductor, is provided onto the resonator length control layer 28. By this structure, the length of a resonator can be adjusted independently of the width of the hysteresis of an optical output which bases on a bias current, so that the intensity of a set light call be made small.
公开日期	1990-02-28
申请日期	1988-08-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77922]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	ODAKAWA TETSUSHI,YAMAGOSHI SHIGENOBU. Bistable semiconductor laser. JP1990060182A. 1990-02-28.

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