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	Semiconductor laser
	FUJISAWA HIROKAZU
	1988-10-20
著作权人	NEC CORP
专利号	JP1988253689A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To reduce thermal stress applied to an active layer by arranging clad layers in different thickness adjacent to a section in the vicinity of a current constriction section. CONSTITUTION:An n-type GaAs block layer 2 is formed onto a p-type GaAs substrate 1, a groove as a current constriction section is shaped, a p-type Ga0.55 Al0.45As clad layer 3 is laminated onto the whole surface, and the current constriction section 10 is formed. A p-type Ga0.85Al0.15As active layer 4 and an n-type Ga0.55Al0.45As clad layer 5 are grown in succession. The clad layer 5 is etched by a striped mask shaped conformed to the center of the current constriction section 10 to form a stress relaxation layer 9. Lastly, an n-type GaAs cap layer 6 is shaped, and electrodes 7, 8 are formed. Accordingly, the stress relaxation layer 9 is formed, thus reducing stress in the active layer, particularly, stress near the current constriction section.
公开日期	1988-10-20
申请日期	1987-04-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77874]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	FUJISAWA HIROKAZU. Semiconductor laser. JP1988253689A. 1988-10-20.

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