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	SUZUKI TOORU
	1991-12-16
著作权人	NIPPON ELECTRIC CO
专利号	JP1991078792B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain a green visible light laser by holding an active layer consisting of a direct transition type substance, film thickness thereof is approximately the same as a de Broglie wavelength of carriers, by plural layers, conductivity thereof differs to each other, and lattice-aligning the active layer on a substrate. CONSTITUTION:A ZnSwTe1-w layer 2, conditions for lattice-alignment thereof are very excellent and a band gap thereof is large, is crystal-grown on an N type GaAs substrate 1 in the thickness of approximately 2-3mum, and an active layer 3 consisting of direct transition type (AlxGa1-x)y In1-yPzAs1-z (0<=x, y, z<=1), film thickness thereof is approximately the same as a de Broglie wavelength of carriers, is formed on the layer 2 through a molecular-beam epitaxial method. A layer 4 of the qualiy of a material the same as the layer 2 is formed in the thickness of approximately 2-3mum, an N type GaAs layer 5 is formed in approximately 1mum, and a P type impurity is diffused in the width of approximately 5mum in a striped shape to form a diffusion layer 6. Then, ohmic electrodes 7, 8 are formed.
公开日期	1991-12-16
申请日期	1983-01-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77866]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	SUZUKI TOORU. -. JP1991078792B2. 1991-12-16.

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