Optical amplifying light-emitting light-receiving integrated element | |
TERAKADO TOMOJI; ODAGIRI YUUICHI | |
1985-12-02 | |
著作权人 | NIPPON ELECTRIC CO |
专利号 | JP1985242688A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Optical amplifying light-emitting light-receiving integrated element |
英文摘要 | PURPOSE:To obtain an element, crystal growth thereof is easy and a manufacturing process thereof is simple, by laminating a second conduction type collector layer, a first conduction type base layer and a second conduction type emitter layer on a semiconductor layer in the uppermost section of a semiconductor laser in succession and forming a phototransistor. CONSTITUTION:A mesa 104 held by two grooves is manufactured on a DH substrate in which a P-InP clad layer 101, a non-doped InGaAsP active layer 102 and an N-InP clad layer 103 are grown on a P-InP substrate in succession. An N-InP first current blocking layer 105, a P-InP second current blocking layer 106 and an N-InP buried layer 107 are formed through a liquid phase growth methed, thus manufacturing a semiconductor laser 2. An N-InGaAs collector layer 108, a P-InGaAs base layer 109 and an N-InP emitter layer 110 are laminated in succession, thus manufacturing a phototransistor 3. |
公开日期 | 1985-12-02 |
申请日期 | 1984-05-17 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/77644] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON ELECTRIC CO |
推荐引用方式 GB/T 7714 | TERAKADO TOMOJI,ODAGIRI YUUICHI. Optical amplifying light-emitting light-receiving integrated element. JP1985242688A. 1985-12-02. |
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