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	Optical amplifying light-emitting light-receiving integrated element
	TERAKADO TOMOJI; ODAGIRI YUUICHI
	1985-12-02
著作权人	NIPPON ELECTRIC CO
专利号	JP1985242688A
国家	日本
文献子类	发明申请
其他题名	Optical amplifying light-emitting light-receiving integrated element
英文摘要	PURPOSE:To obtain an element, crystal growth thereof is easy and a manufacturing process thereof is simple, by laminating a second conduction type collector layer, a first conduction type base layer and a second conduction type emitter layer on a semiconductor layer in the uppermost section of a semiconductor laser in succession and forming a phototransistor. CONSTITUTION:A mesa 104 held by two grooves is manufactured on a DH substrate in which a P-InP clad layer 101, a non-doped InGaAsP active layer 102 and an N-InP clad layer 103 are grown on a P-InP substrate in succession. An N-InP first current blocking layer 105, a P-InP second current blocking layer 106 and an N-InP buried layer 107 are formed through a liquid phase growth methed, thus manufacturing a semiconductor laser 2. An N-InGaAs collector layer 108, a P-InGaAs base layer 109 and an N-InP emitter layer 110 are laminated in succession, thus manufacturing a phototransistor 3.
公开日期	1985-12-02
申请日期	1984-05-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77644]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	TERAKADO TOMOJI,ODAGIRI YUUICHI. Optical amplifying light-emitting light-receiving integrated element. JP1985242688A. 1985-12-02.

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