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	Semiconductor laser device
	NUMAI TAKAAKI; MITO IKUO
	1988-12-06
著作权人	NEC CORP
专利号	JP1988299390A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a lambda/4 shift type DFB laser having a good yield by making the pitch of the diffraction grating near the phase shift region smaller than the pitch of the diffraction grating corresponding to the Bragg wavelength. CONSTITUTION:On an N-type In substrate 100, a secondary lambda/4 shift diffraction grating is formed using the electron beam lithography. The period is 4800Angstrom in the region to 100mum from the end face, and in the remaining region including the lambda/4 shift position, the period is 3000Angstrom at both sides of the lambda/4 shift position, which is made larger in the nearer position to the end face and 4800Angstrom at the place which is apart from the end face by 100mum. Then, a non-doped InP guide layer 120, an N-type InP buffer layer 130, a non-doped active layer 140 and a P-type clad layer 150 are sequentially grown. With this, a lambda/4 shift type DFB laser having a good yield is obtained.
公开日期	1988-12-06
申请日期	1987-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77639]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	NUMAI TAKAAKI,MITO IKUO. Semiconductor laser device. JP1988299390A. 1988-12-06.

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