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	Manufacture of semiconductor laser element
	NAKA HIROSHI
	1984-12-27
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1984232476A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser element
英文摘要	PURPOSE:To prevent generation of leak current which passes through a buried layer by providing impurity which diffuses to obtain an ohmic contact in a clad layer of double hetero junction construction before the buried layer is formed. CONSTITUTION:In a wafer, multilayers consisting of an n-InP buffer layer 4, an InGaAsP active layer 5, a p-InP clad layer 6 and a p-InGaAs gap layer 7 grown on an n-InP substrate 2 are formed. Then, on the main surface of the wafer, an ohmic contact layer 15 diffused with impurity Zn is formed. Next, a stripe like mask is formed on the main surface and under the mask, an inverted mesa construction stripe part 8 is formed. Later, buried multilayers 12 consisting of a blocking layer 9, a buried layer 10 and a buried gap layer 11 are formed on etched grooves. Consequently, the active layer 5 forms a buried hetero junction construction 13 in the interval with the buried layer 10.
公开日期	1984-12-27
申请日期	1983-06-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77623]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	NAKA HIROSHI. Manufacture of semiconductor laser element. JP1984232476A. 1984-12-27.

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