半導体発光装置 | |
大場 康夫; 菅原 秀人; 渡辺 美代子; 石川 正行 | |
1997-06-06 | |
著作权人 | 株式会社東芝 |
专利号 | JP2659937B2 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体発光装置 |
英文摘要 | PURPOSE:To manufacture a low cost visible light semiconductor laser which is made of InGaAlP and has excellent characteristics by a method wherein a current constriction structure and an optical waveguide structure are formed in a self-aligning manner by utilizing selective growth performed by MOCVD. CONSTITUTION:An N-type GaAs 1st buffer layer 12, an N-type InGaP 2nd buffer layer 13 and so forth are successively formed on an N-type GaAs substrate 11 by MOCVD to form a double-hetero water. Then a stripe-shape mask with 5 mum width is formed on a cap layer by photoetching. Then etching is carried out with mixed solution of hydrobromic acid, bromine and water to from a stripe-shape intermediate contact layer 17. 2nd cladding layer 16 is half-etched to form a stripe-shape mesa. Thereupon, selective etchant for InGaAlP is sulfuric acid or phosphoric acid which is applied at a temperature of 15-130 deg.C. Then, after a wafer is heated and kept in the vapor atmosphere of phosphorus and In at about 800 deg.C to remove a surface oxide film, a P-type GaAs contact layer 18 is made to grow over the whole surface by MOCVD. |
公开日期 | 1997-09-30 |
申请日期 | 1986-09-26 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/77585] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 株式会社東芝 |
推荐引用方式 GB/T 7714 | 大場 康夫,菅原 秀人,渡辺 美代子,等. 半導体発光装置. JP2659937B2. 1997-06-06. |
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