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	半導体レ-ザの製造方法
	庄野 昌幸; 浜田 弘喜
	1994-01-26
著作权人	SANYO ELECTRIC CO
专利号	JP1994007633B2
国家	日本
文献子类	授权发明
其他题名	半導体レ-ザの製造方法
英文摘要	PURPOSE:To form a semiconductor laser of long life by laminating a clad layer and an active layer on a substrate to form an oscillation layer, lapping the front surface and the back surface of the substrate, and forming the first electrode on the back surface of the substrate and the second electrode on the front surface of the oscillator from which a damage layer is removed. CONSTITUTION:A clad layer, an active layer and a clad layer are sequentially laminated on a substrate 1 having a V-shaped groove on the front surface to form an oscillation layer 10. Then, the layer 10 is lapped to form a damage layer 2 The back surface of the substrate 1 is lapped to form a damage layer 22. Then, gold is deposited on the back surface of the substrate to form the first electrode 7, and the electrode 7 and the substrate 1 are heat treat at the prescribed temperature to be ohmically formed. Thereafter, the layer 21 is removed, heat treated at the prescribed temperature to form the second electrode 8 on the layer 10. Tensile strength generated at the electrode 8 is cancelled by compressive and tensile stresses generated at the electrode 7, the layer 22 and the layer 10, the internal stresses become zero as a whole, and the internal stresses generated in the manufacturing steps can be suppressed to low values. Thus, a semiconductor layer of long life can be manufactured.
公开日期	1994-01-26
申请日期	1985-09-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77503]
专题	半导体激光器专利数据库
作者单位	SANYO ELECTRIC CO
推荐引用方式 GB/T 7714	庄野 昌幸,浜田 弘喜. 半導体レ-ザの製造方法. JP1994007633B2. 1994-01-26.

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