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	Semiconductor laser
	YAMASHITA KOJI
	1988-10-31
著作权人	三菱電機株式会社
专利号	JP1988263785A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve S/N characteristic of a semiconductor laser without rely ing upon the variation in a returning light ratio by forming a periodic structure for selectively feeding back only a light of wavelength used by diffracting a light generated in an active layer at the upper or lower side of the layer of a laser which is self-oscillated. CONSTITUTION:A guide layer 10 made of In1-pGapP1-qAsq formed between a first upper clad layer 4 and an active layer 4 is formed by a 2-luminous flux interference exposure method and etching, and its periodic structure is so formed as to selectively feed back only a light of wavelength used by operat ing as a secondary diffraction grating. The thickness of the layer 4 is set so that an oscillation spectrum becomes a self-oscillation mode. Since only the light of the wavelength used by the grating of the light generated from the layer 3 is selectively fed back in this manner and the beam width of the spec trum is extended peculiarly for the self-oscillation, S/N characteristic is particu larly preferable to oscillate in a single mode.
公开日期	1988-10-31
申请日期	1987-04-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77496]
专题	半导体激光器专利数据库
作者单位	三菱電機株式会社
推荐引用方式 GB/T 7714	YAMASHITA KOJI. Semiconductor laser. JP1988263785A. 1988-10-31.

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