Semiconductor laser | |
YAMASHITA KOJI | |
1988-10-31 | |
著作权人 | 三菱電機株式会社 |
专利号 | JP1988263785A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To improve S/N characteristic of a semiconductor laser without rely ing upon the variation in a returning light ratio by forming a periodic structure for selectively feeding back only a light of wavelength used by diffracting a light generated in an active layer at the upper or lower side of the layer of a laser which is self-oscillated. CONSTITUTION:A guide layer 10 made of In1-pGapP1-qAsq formed between a first upper clad layer 4 and an active layer 4 is formed by a 2-luminous flux interference exposure method and etching, and its periodic structure is so formed as to selectively feed back only a light of wavelength used by operat ing as a secondary diffraction grating. The thickness of the layer 4 is set so that an oscillation spectrum becomes a self-oscillation mode. Since only the light of the wavelength used by the grating of the light generated from the layer 3 is selectively fed back in this manner and the beam width of the spec trum is extended peculiarly for the self-oscillation, S/N characteristic is particu larly preferable to oscillate in a single mode. |
公开日期 | 1988-10-31 |
申请日期 | 1987-04-21 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/77496] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 三菱電機株式会社 |
推荐引用方式 GB/T 7714 | YAMASHITA KOJI. Semiconductor laser. JP1988263785A. 1988-10-31. |
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