Semiconductor device and method of manufacturing the same | |
KASHIMA, YASUMASA; MUNAKATA, TSUTOMU | |
2003-05-27 | |
著作权人 | OKI SEMICONDUCTOR CO., LTD. |
专利号 | US6570189 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor device and method of manufacturing the same |
英文摘要 | A semiconductor device includes a substrate formed of a group III element and a group V element, a buffer layer having a thickness of at least 0.5 mum covering an the entire main surface of the substrate, and a selective-area growth layer grown selectively on the buffer layer. The buffer layer includes both the group III element and the group V element. The buffer layer is formed by metalorganic vapor-phase epitaxy. |
公开日期 | 2003-05-27 |
申请日期 | 1999-12-07 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/77489] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | OKI SEMICONDUCTOR CO., LTD. |
推荐引用方式 GB/T 7714 | KASHIMA, YASUMASA,MUNAKATA, TSUTOMU. Semiconductor device and method of manufacturing the same. US6570189. 2003-05-27. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论