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	Semiconductor laser
	OGURA MOTOTSUGU; UNO TOMOAKI
	1986-10-28
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1986242090A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To interrupt penetration and introduction of a defect from a diffraction grating to an active layer by a superlattice layer, and to lengthen the life of a semiconductor laser by using the superlattice layer as an optical waveguide layer on the diffraction grating. CONSTITUTION:A waveguide layer on a diffraction grating 2 is shaped by a superlattice layer 7 consisting of thin-film multilayers, and a defect introduced from the diffraction grating 2 is stopped there by the superlattice layer 7, and is not admitted up to an active layer 8, thus improving the crystallizability of the active layer. That is, laminated structure in which the superlattice layer 7 composed of the thin-film multilayers consisting of a hetero-junction, the active layer 8 and a clad layer 5 having a refractive index smaller than the active layer are made to be contained on the surface of a semiconductor substrate with grooves of periodic structure is formed. Not a little energy in a strain field exists on the interface of the hetero-junctions, a defect gradually introduced to an epitaxial layer from the substrate side escapes to the outside along the hetero-interface, thus hardly admitting the defect up to the active layer 8 especially in the case such as a superlattice having a large number of hetero-junction interfaces, thereby acquiring an excellent DFB laser.
公开日期	1986-10-28
申请日期	1985-04-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77385]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	OGURA MOTOTSUGU,UNO TOMOAKI. Semiconductor laser. JP1986242090A. 1986-10-28.

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