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	Semiconductor laser array
	SEKIGUCHI YOSHINOBU; NOJIRI HIDEAKI; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI; HARA TOSHITAMI
	1988-11-29
著作权人	CANON INC
专利号	JP1988292688A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser array
英文摘要	PURPOSE:To obtain a dense scanning line pitch, whose adjustment is simple, by differentiating the light emitting points of a plurality of semiconductor lasers, which have the approximately same oscillating wavelengths, in the laminating directions. CONSTITUTION:Steps are provided on the upper surface of an n-GaAs substrate 22 so as to form three planes having the different heights. Namely, an n-GaAs buffer layer 23, a lower clad layer 24, an active layer 25, an upper clad layer 26 and a P-GaAs cap layer 27 are laminated. When currents are injected through electrodes 28a, 28b and 28c, laser light beams, which have the approximately same oscillating wavelengths, are outputted from light emitting points 29a, 29b and 29c. When the currents are controlled, the light emitting points are independently driven. Since the step of the substrate 22 are intactly kept at the light emitting points, the points are separated by every 5 mum in the laminating direction of semiconductors. When, a semiconductor laser array is used in a beam scanning apparatus, the difference in heights of the light emitting points in the laminating direction can be used for the interval of the scanning lines. Since the scanning lines can be horizontally kept with respect to the scanning direction, adjustment is simple.
公开日期	1988-11-29
申请日期	1987-05-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77353]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	SEKIGUCHI YOSHINOBU,NOJIRI HIDEAKI,HASEGAWA MITSUTOSHI,et al. Semiconductor laser array. JP1988292688A. 1988-11-29.

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