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	Semiconductor laser device
	YURI MASAAKI; OTA KAZUNARI
	1990-11-20
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1990283087A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To realize a NAM-LOC structure by one crystal growing step by sequentially forming a clad layer, a guide layer, an active layer on a GaAs substrate having a protrusion including a reverse mesa face on its upper face by a MOCVD method. CONSTITUTION:After a protrusion 1a having a reverse mesa face on an N-type GaAs substrate 1 is formed by chemical etching, an N-type Al0.5Ga0.5As clad layer 2, an Al0.2Ga0.8As first guide layer 3, an Al0.1Ga0.9As active layer 4, a P-type Al0.5Ga0.5As clad layer 5, a P-type Al0.2Ga0.8As second guide layer 6, a P-type Al0.5Ga0.5As clad layer 7, and a P-type GaAs cap layer 8 are sequentially grown by a MOCVD method. According to this structure, the layer 6 except the upper face of the protrusion, the layer 3 of the upper face of the protrusion or the layer 4 are continuously connected, a NAM-LOC type semiconductor laser device in which the layer 5 is as a NAM region can be realized, and a high output operation can be performed.
公开日期	1990-11-20
申请日期	1989-04-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77236]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YURI MASAAKI,OTA KAZUNARI. Semiconductor laser device. JP1990283087A. 1990-11-20.

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