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	Vertical cavity semiconductor optical devices
	STEPHANE, LUC, DOMINIQUE, CALVEZ; JOHN-MARK, HOPKINS; DAVID, BURNS; MARTIN, DAVID, DAWSON
	2004-09-29
著作权人	THE UNIVERSITY OF STRATHCLYDE
专利号	GB2399941A
国家	英国
文献子类	发明申请
其他题名	Vertical cavity semiconductor optical devices
英文摘要	An optical device comprises an active semiconductor region 130 for providing gain for signal light 170. A signal light reflector 120 reflects the signal light 170 through the active region in a direction out of the plane of the active region. A pump light reflector 120 reflects pump light to form a standing wave 160 in the device. The active layer, signal light reflector and pump light reflector may be monolithically integrated within a chip. The reflectors may be Distributed Bragg Reflectors. Gain elements (fig 10: 133), which may be quantum wells, absorb pump light to provide gain to the signal light. The absorbers may be disposed at or near pump light antinodes and antinodes of standing waves in the signal light. Alternatively, an absorbing element 191 may be at or near a node in the pump standing wave, acting as a saturable absorber for the signal wave to achieve passive modelocking to produce a pulsed output. A second device 133 acts as a gain element to absorb pump light.
公开日期	2004-09-29
申请日期	2003-03-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77188]
专题	半导体激光器专利数据库
作者单位	THE UNIVERSITY OF STRATHCLYDE
推荐引用方式 GB/T 7714	STEPHANE, LUC, DOMINIQUE, CALVEZ,JOHN-MARK, HOPKINS,DAVID, BURNS,et al. Vertical cavity semiconductor optical devices. GB2399941A. 2004-09-29.

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