Semiconductor laser device | |
NANBARA SEIJI; YAMASHITA KOJI | |
1991-12-13 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1991283483A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To enable an overall optical output, a front optical output, and the like to be improved in linearity of P-I characteristics and set equal in P-I characteristic form by a method wherein a mirror coat is provided to the rear of a DFB-LD, and all laser beams are emitted from a front side. CONSTITUTION:Metal is evaporated on the rear of a DFB-LD 1 to enable the rear to have a reflectivity of 100%. A part of a front optical output 10 is used as a monitor output 1 When a voltage 6 is applied onto the DFB-LD 11, a drive current is made to flow, and an active layer 2 is made to emit light. A part of light possessed of a certain wavelength is selectively amplified through a diffraction grating 3 to become an oscillation spectrum of a single longitudinal mode. As the rear of the DFB-LD is provided with a mirror coat 5, all the laser beams are emitted forward. An overall optical output 8 is split into a forward optical output 10 and a monitor optical output 11 through a beam splitter 9. By this setup, the overall optical output Pt8, the forward optical output Po10, and a monitoring optical output 11 are all equal in P-I characteristic form and linear in Po-Pm. |
公开日期 | 1991-12-13 |
申请日期 | 1990-03-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/77168] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NANBARA SEIJI,YAMASHITA KOJI. Semiconductor laser device. JP1991283483A. 1991-12-13. |
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