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	Semiconductor laser device
	NANBARA SEIJI; YAMASHITA KOJI
	1991-12-13
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991283483A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To enable an overall optical output, a front optical output, and the like to be improved in linearity of P-I characteristics and set equal in P-I characteristic form by a method wherein a mirror coat is provided to the rear of a DFB-LD, and all laser beams are emitted from a front side. CONSTITUTION:Metal is evaporated on the rear of a DFB-LD 1 to enable the rear to have a reflectivity of 100%. A part of a front optical output 10 is used as a monitor output 1 When a voltage 6 is applied onto the DFB-LD 11, a drive current is made to flow, and an active layer 2 is made to emit light. A part of light possessed of a certain wavelength is selectively amplified through a diffraction grating 3 to become an oscillation spectrum of a single longitudinal mode. As the rear of the DFB-LD is provided with a mirror coat 5, all the laser beams are emitted forward. An overall optical output 8 is split into a forward optical output 10 and a monitor optical output 11 through a beam splitter 9. By this setup, the overall optical output Pt8, the forward optical output Po10, and a monitoring optical output 11 are all equal in P-I characteristic form and linear in Po-Pm.
公开日期	1991-12-13
申请日期	1990-03-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77168]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NANBARA SEIJI,YAMASHITA KOJI. Semiconductor laser device. JP1991283483A. 1991-12-13.

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