Semiconductor laser | |
TANABE EIZO | |
1992-12-17 | |
著作权人 | FUJI ELECTRIC CO LTD |
专利号 | JP1992364791A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To eliminate a thermal expansion difference between buffer resin and molding resin and to obviate peeling between the two resins or between the buffer resin and a laser diode element by specifying a depth of a lead frame coating from the end of a lead frame made of the buffer resin. CONSTITUTION:A laser diode element mounted on a main flat surface of a lead frame 4a and leads connected to the element are double molded by using first light transmission resin (buffer resin) 8 covering both the element and the leads and second light transmission resin (molding resin) 6 covering the outside. In this resin-molded semiconductor laser, a covering depth ZM of the frame 4a from the end of the frame of first resin is decided so as to satisfy next equation. ZM=D(alphaB/alphaM), where D is a thickness of the laser light transmitting region of the first resin, alphaB is a thermal expansion coefficient of the first resin, and alphaM is a thermal expansion coefficient of the second resin. |
公开日期 | 1992-12-17 |
申请日期 | 1991-06-12 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/77075] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJI ELECTRIC CO LTD |
推荐引用方式 GB/T 7714 | TANABE EIZO. Semiconductor laser. JP1992364791A. 1992-12-17. |
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