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	Semiconductor laser
	TANABE EIZO
	1992-12-17
著作权人	FUJI ELECTRIC CO LTD
专利号	JP1992364791A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To eliminate a thermal expansion difference between buffer resin and molding resin and to obviate peeling between the two resins or between the buffer resin and a laser diode element by specifying a depth of a lead frame coating from the end of a lead frame made of the buffer resin. CONSTITUTION:A laser diode element mounted on a main flat surface of a lead frame 4a and leads connected to the element are double molded by using first light transmission resin (buffer resin) 8 covering both the element and the leads and second light transmission resin (molding resin) 6 covering the outside. In this resin-molded semiconductor laser, a covering depth ZM of the frame 4a from the end of the frame of first resin is decided so as to satisfy next equation. ZM=D(alphaB/alphaM), where D is a thickness of the laser light transmitting region of the first resin, alphaB is a thermal expansion coefficient of the first resin, and alphaM is a thermal expansion coefficient of the second resin.
公开日期	1992-12-17
申请日期	1991-06-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77075]
专题	半导体激光器专利数据库
作者单位	FUJI ELECTRIC CO LTD
推荐引用方式 GB/T 7714	TANABE EIZO. Semiconductor laser. JP1992364791A. 1992-12-17.

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