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	Semiconductor laser element
	KANEIWA SHINJI; HAYASHI HIROSHI; MIYAUCHI NOBUYUKI; KASAI SHUSUKE; MORIMOTO TAIJI
	1990-08-29
著作权人	SHARP CORP
专利号	JP1990216884A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To obtain a semiconductor laser element which can operate with a low current, has a structure capable of being manufactured with satisfactory reproducibility and high reliability by providing two stripelike grown control layers elongated in a resonator direction at a lateral interval in a multilayer structure and containing Al, and forming an active layer between both the control layers. CONSTITUTION:A P-type Gatheta.5Altheta.5.As layer is patterned in a stripe state of 15mum of width by normal etching, and a V-shaped groove 28 arriving at a substrate 11 having 3mum of width and 2mum of depth is formed at the center of the stripe by a photolithography method and etching with a sulfuric acid etchant. The groove 28 is formed to form two stripelike grown control layers 27, 27 having 6mum of width. In a semiconductor laser element, a current is effectively injected to an active layer 16 formed above the groove 28. Since a P-N junction for blocking a current is formed of a N-type current blocking layer 12 formed in advance and a P-type clad layer 15, no leakage current is generated. Thus, it can be driven with low current and low power.
公开日期	1990-08-29
申请日期	1989-02-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76978]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	KANEIWA SHINJI,HAYASHI HIROSHI,MIYAUCHI NOBUYUKI,et al. Semiconductor laser element. JP1990216884A. 1990-08-29.

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