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	半導体レーザ装置
	石野 正人; 佐々井 洋一
	1994-02-02
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1994009280B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置
英文摘要	PURPOSE:To obtain excellent oscillation characteristics and modulation characteristics by a simple structural process by making the thickness of the well layer of a quantum well layer in a first region larger than that of a well layer in a second region. CONSTITUTION:A diffraction grating at pitches of 4000Angstrom is formed onto an optical waveguide layer in an active region 2 The active region 21 and an optical modulation region 22 are isolated electrically by a proton injection layer 13. The well-layer thickness Lz of an MQW layer 2 is 100Angstrom and barrier- layer thickness thereof is 100Angstrom in the optical modulation region 22, though the well-layer thickness Lz of the layer 2 is 200Angstrom and barrier-layer thickness thereof is 200Angstrom in the active region 21, and film thickness differs in the regions 21 and 22. When forward DC currents are applied between the electrodes 6-12 in the region 21 at that time, laser oscillation having a wavelength of 30mum is acquired. On the other hand, a reverse bias is applied between electrodes 11-12 in the optical modulation region 22, thus allowing optical modulation.
公开日期	1994-02-02
申请日期	1988-06-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76954]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	石野 正人,佐々井 洋一. 半導体レーザ装置. JP1994009280B2. 1994-02-02.

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