半導体レーザ装置 | |
石野 正人; 佐々井 洋一 | |
1994-02-02 | |
著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
专利号 | JP1994009280B2 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体レーザ装置 |
英文摘要 | PURPOSE:To obtain excellent oscillation characteristics and modulation characteristics by a simple structural process by making the thickness of the well layer of a quantum well layer in a first region larger than that of a well layer in a second region. CONSTITUTION:A diffraction grating at pitches of 4000Angstrom is formed onto an optical waveguide layer in an active region 2 The active region 21 and an optical modulation region 22 are isolated electrically by a proton injection layer 13. The well-layer thickness Lz of an MQW layer 2 is 100Angstrom and barrier- layer thickness thereof is 100Angstrom in the optical modulation region 22, though the well-layer thickness Lz of the layer 2 is 200Angstrom and barrier-layer thickness thereof is 200Angstrom in the active region 21, and film thickness differs in the regions 21 and 22. When forward DC currents are applied between the electrodes 6-12 in the region 21 at that time, laser oscillation having a wavelength of 30mum is acquired. On the other hand, a reverse bias is applied between electrodes 11-12 in the optical modulation region 22, thus allowing optical modulation. |
公开日期 | 1994-02-02 |
申请日期 | 1988-06-21 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/76954] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | 石野 正人,佐々井 洋一. 半導体レーザ装置. JP1994009280B2. 1994-02-02. |
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