| Manufacture of semiconductor laser | |
| FURUMIYA SATOSHI; OKUDA SHINYA | |
| 1985-10-25 | |
| 著作权人 | FUJITSU KK |
| 专利号 | JP1985213074A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve luminous efficiency by using a p type indium.phosphorus layer, to which p type and n type impurities are added simultaneously in high concentration, as a current limiting layer for a p-n-p-n junction. CONSTITUTION:When a p type InP current limiting layer 2 is grown on an n type InP substrate 1, a p type impurity and an n type impurity are added simultaneously in high concentration. An SiO2 layer is applied in order to form a V groove, and a striped section 9 is shaped. An n type InP layer 3 is formed on the p type InP current limiting layer 2 containing the V groove. A non-doped n type InGaAsP active layer 4, a p type InP layer 5 and a p type InGaAsP layer 6 are shaped and epitaxial growth is completed, and electrodes 7, 8 are annexed to upper and lower sections, thus obtaining a laser element. |
| 公开日期 | 1985-10-25 |
| 申请日期 | 1984-04-09 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76854]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI,OKUDA SHINYA. Manufacture of semiconductor laser. JP1985213074A. 1985-10-25. |
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