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	Semiconductor laser element and manufacture thereof
	NAKA HIROSHI; AIKI KUNIO; KATO YOSHIAKI
	1986-09-27
著作权人	HITACHI LTD
专利号	JP1986218191A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element and manufacture thereof
英文摘要	PURPOSE:To keep the single lateral mode oscillation constantly and to stabilize a far field pattern by eliminating a random sway by forming a diffraction gratings on a boundary of a mesa part. CONSTITUTION:When a multilayer growth layer 8 comprising an active layer 5 is etched, a mask 9 having diffraction gratings 10 on both sides is used for etching. On both sides of a mesa part 11, that is both sides of a light waveguide path 1, diffraction gratings 12 of a desired pitch are formed and the crystal planes of both sides of the mesa part 11 are made the (111) crystal planes on which the melt back causing In to appear hardly occur. Accordingly though a buried layer 14 is formed on both sides of the mesa part 11 by a liquid-phase epitaxial method, the diffraction gratings 12 are not damaged and the single wavelength light emission can be maintained in spite of a high-speed modulation.
公开日期	1986-09-27
申请日期	1985-03-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76825]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	NAKA HIROSHI,AIKI KUNIO,KATO YOSHIAKI. Semiconductor laser element and manufacture thereof. JP1986218191A. 1986-09-27.

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