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	半導体レ-ザ装置
	葛西 淳一; 茅根 直樹; 三島 友義; 白木 靖寛
	1996-01-17
著作权人	株式会社日立製作所
专利号	JP1996004171B2
国家	日本
文献子类	授权发明
其他题名	半導体レ-ザ装置
英文摘要	PURPOSE:To scale up spot size, to reduce recombination in a quantum well in a clad layer and to increase an output by conforming the uppermost end of the quantum level of electrons in the quantum well to the energy level of a barrier layer in the width of the quantum well of the clad layer. CONSTITUTION:When the uppermost end of a quantum level coincides with the energy level of a barrier layer, probability in which electrons once injected escape to the outside of the quantum well is increased, thus making the quantity of electrons injected smaller than other cases. On the other hand, the refractive index of quantum well structure takes the intermediate value of the refractive indices of a well layer and the barrier layer. Consequently, when quantum well structure is used as a clad layer, the difference of refractive indices can be minimized without changing the difference of the forbidden band width of an active layer and the clad layer. Accordingly, the spot size of light emission can be scaled up without altering the confinement of carriers to the active layer.
公开日期	1996-01-17
申请日期	1986-11-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76777]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	葛西 淳一,茅根 直樹,三島 友義,等. 半導体レ-ザ装置. JP1996004171B2. 1996-01-17.

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