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	半導体レーザ装置
	成井 啓修; 平田 照二
	1999-10-01
著作权人	ソニー株式会社
专利号	JP2985354B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置
英文摘要	PURPOSE:To obtain a semiconductor equipment having a high energy conversion efficiency by providing a lower threshold current for the semiconductor laser equipment. CONSTITUTION:A main plane 1S comprises {100} crystal planes, and a photo absorption layer 3, a second conductive type first clad layer 4, an activity layer 5 and a first conductive type clad layer 6 are formed in a triangular sectional shape on a first conductive type substrate 1 having a mesa projection 2 extending in crystal axis direction. Then, the both sides of the photo absorption layer 3 of said triangular sectional shape portion 10 on the mesa projection 2 is touched to the first conductive type clad layer 6, and both the sides of the activity layer 5 and clad layer 6 are touched to a second conductive type second clad layer 8 on a mesa groove 2A. Moreover, provided are the first external electrode 12 ohmic-touched to the clad layer 6 of the triangular sectional portion 10 on the mesa projection 2, the second external electrode 13 ohmic-touched to the clad layer 8 on the mesa groove 2A at both the sides of the activity layer 5 the clad layer 6, and the external electrode 14 ohmic- touched to the substrate
公开日期	1999-11-29
申请日期	1991-04-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76747]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	成井 啓修,平田 照二. 半導体レーザ装置. JP2985354B2. 1999-10-01.

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