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	OOSAWA JUN; IKEDA KENJI; TAKAHASHI KAZUHISA; SUZAKI WATARU
	1988-10-27
著作权人	KOGYO GIJUTSUIN
专利号	JP1988054234B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To improve temperature characteristics, by holding a thin barrier layer between an active layer and a light guiding layer, and providing a strip varied heterostructure only in the vicinity of a strip part. CONSTITUTION:An N-type first clad layer 2 is provided at a part of an n type semiconductor substrate. An n type light guiding layer 3, which has a higher refractive index than that of the layer 2, is provided on the layer 2. An n type barrier layer 9, whose width is narrower than the width of the layer 3, is provided on the layer 3. A p type active layer 4 is provided on the layer 9. A p type second clad layer is provided on th layer 4. A highly resistive, third clad layer 10 is provided so as to contact with the side surfaces of the layers 9, 4, and 5 and so that those layers are embedded. The band gas of the layer 9 is made larger than that of the layers 3 and 4, and the thickness of the layer 9 is made smaller than the thickness of the layer 4. In this constitution, the carriers injected into the layer 4 is hard to leak to the side of the layers 3 and effectively confined in the layer 4. This effect is especially conspicuous at the time of high temperature operation. As a result, the temperature dependency of the threshold value of the laser oscillation becomes small.
公开日期	1988-10-27
申请日期	1982-09-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76684]
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN
推荐引用方式 GB/T 7714	OOSAWA JUN,IKEDA KENJI,TAKAHASHI KAZUHISA,et al. -. JP1988054234B2. 1988-10-27.

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