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	Semiconductor laser
	TOYODA YUKIO; OOSHIMA MASAAKI; KINO YUKIHIRO
	1985-07-29
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1985143684A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To reduce effective reflection factor against approximation mode, to restrain proximity mode and to improve the singleness of longitudinal mode by causing interference effect due to internal reflection. CONSTITUTION:An internal reflection plane due to replacement with a material which has smaller refractive index than that of an active layer or an adjacent waveguide to it is provided. For example, on an N type InP substrate 1, an N-In1-xGaxAsyP1-y layer 2, an N-InP layer 3, a P-InP layer 4, an N-InP layer 5 and a P-In1-x'GaxAsy'P1-y' layer 6 are grown one after another and a stripe type groove is formed. In the groove, an N-InP layer 8, an N-In1-xGaxAsyP1-y (active layer) 9, a P-InP layer 10 and a P-In1-x'Gax'Asy'P1-y' layer 11 are grown one after another and the crescent type active layer 9 is buried. In the region where the groove is not formed, crystal is not grown even by the second growth and the surface of SiO2 remains intact, where an active layer is lacked to become an internal reflection plane.
公开日期	1985-07-29
申请日期	1983-12-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76649]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	TOYODA YUKIO,OOSHIMA MASAAKI,KINO YUKIHIRO. Semiconductor laser. JP1985143684A. 1985-07-29.

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