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	Semiconductor laser device and manufacture thereof
	NAGAI YUTAKA; MIHASHI YUTAKA; YAGI TETSUYA; OTA YOICHIRO
	1988-09-06
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988213988A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device and manufacture thereof
英文摘要	PURPOSE:To enable low threshold currents and low-current operation, and to improve noise characteristics by forming a semiconductor substrate, a first clad layer, a first current blocking layer and a second current blocking layer in a first conductivity type and a second clad layer, an optical guide layer and a contact layer in a second conductivity type. CONSTITUTION:Each layer of a first clad layer 2, an active layer 3, a second clad layer 4, an optical guide layer 5 and a contact layer 6 is crystal-grown onto a substrate 1 in succession. An SiO2 film 10 is formed onto the surface of a wafer, and others are removed, leaving the film 10 to a striped shape. The contact layer 6 and the optical guide layer 5 are gotten rid of selectively, and a first current blocking layer 7a and a second current blocking layer 7b are shaped through second crystal growth. The SiO2 film 10 is taken off, and lastly a p electrode 9 is formed on the substrate 1 side and an n electrode 8 on the reverse side. The forbidden band width of the second current blocking layer 7b is made larger than the active layer 3, and loss guide structure in which laser beams generated in the active layer 3 are absorbed effectively in the first current blocking layer 7a between these layer 7b and layer 3 is constituted, but laser beams are hardly absorbed in the second current blocking layer 7b.
公开日期	1988-09-06
申请日期	1987-03-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76549]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI YUTAKA,MIHASHI YUTAKA,YAGI TETSUYA,et al. Semiconductor laser device and manufacture thereof. JP1988213988A. 1988-09-06.

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