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	半導体レ-ザ装置
	魚見 和久; 茅根 直樹; ▲吉▼沢 みすず; 中塚 慎一; 梶村 俊
	1996-04-30
著作权人	株式会社日立製作所
专利号	JP2515729B2
国家	日本
文献子类	授权发明
其他题名	半導体レ-ザ装置
英文摘要	PURPOSE:To obtain a semiconductor laser having high output with one emitting beam and high reliability by providing different regions of a half number of laser emitting stripes at least one position. CONSTITUTION:An N-type Ga0.5Al0.5As clad layer 2, an undoped Ga0.86Al0.14As active layer 3, a P-type Ga0.5Al0.5As clad layer 4, an N-type GaAs current narrowing layer 5 are sequentially formed by a MOCVD method on an N-type GaAs substrate crystal The layer 5 is completely removed by photoetching step, four groove stripes of 4mum of width for exposing the surface of the layer 4 are formed near both ends of the laser, and two groove stripes are formed at the center of the laser. Then, a P-type Ga0.5Al0.5As clad layer 6, and a P-type GaAs cap layer 7 are formed by MOCVD method, a P-type electrode 8 and an N-type electrode 9 are formed, and a laser element of approx. 300mum of resonator is obtained by a cleaving method. Thus, a phased array laser having low aberration and high output of refractive index waveguide type can be realized.
公开日期	1996-07-10
申请日期	1985-09-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76527]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	魚見 和久,茅根 直樹,▲吉▼沢 みすず,等. 半導体レ-ザ装置. JP2515729B2. 1996-04-30.

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