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	Semiconductor laser
	TSUNEKAWA YOSHIFUMI
	1990-03-07
著作权人	SEIKO EPSON CORP
专利号	JP1990067777A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser which has a high-output characteristic and a low-noise characteristic and which is oscillated stably in a single-ridged transverse mode by a method wherein an end-face part of a resonator is of a phased array structure and a part near the center of the resonator is of a structure having a mode filter function and a gain waveguide mechanism. CONSTITUTION:Side faces of a rib-shaped waveguide formed by etching a second clad layer to a halfway part to be an upper-face shape 109 of the rib-shaped waveguide are filled with ZnSe; a current constriction layer 108 composed of a high-resistance layer is formed. A rib-shaped light waveguide width and a current injection width are made nearly equal and are made narrow near a light-radiating end face; they form a refractive-index waveguide mechanism; they are arranged close to each other so as to be of a phased array structure; a high-output oscillation can be obtained. The rib-shaped light waveguide width is made wide, and a coherent length is made short near the central part; an interference property with respect to a returned beam is lowered; a low noise is realized.
公开日期	1990-03-07
申请日期	1988-09-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76293]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TSUNEKAWA YOSHIFUMI. Semiconductor laser. JP1990067777A. 1990-03-07.

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