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	OKUDA HAJIME; KINOSHITA JUNICHI; HIRAYAMA JUZO; UEMATSU YUTAKA
	1988-10-14
著作权人	KOGYO GIJUTSUIN
专利号	JP1988051558B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To form an active layer at a high temperature without extinguishing a diffraction grating and thus enable the reduction of threshold value and the oscillation of single lateral mode by a method wherein a hetero-junction including the active layer is formed in the second process of crystal growth after anoptical waveguide layer and a current blocking layer are formed in the first process of crystal growth, and thereafter a groove is formed by etching. CONSTITUTION:A diffraction grating 2 is formed on an N-InP substrate Next, an N-GaInAsP layer 3, a P-InP layer 4, and an N-GaInAsP layer 5 are successively epitaxially grown on the substrate Then, using a mask and H2SO4 series etchant, the layer 5 is selectively etched to form the groove. Using HCl series etchant, the layer 4 is selectively etched with the layer 5 as a mask. An N-InP layer 6, a GaInAsP layer 7 doped with phosphorus, a P-InP layer 8, and a P GaInAsP layer 9 are successively epitaxially grown by crystal growth. Thereafter, electrodes are attached, etc., and accordingly a DFB laser is completed.
公开日期	1988-10-14
申请日期	1983-06-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76210]
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN
推荐引用方式 GB/T 7714	OKUDA HAJIME,KINOSHITA JUNICHI,HIRAYAMA JUZO,et al. -. JP1988051558B2. 1988-10-14.

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