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	Structure of semiconductor laser
	TAKAMIYA SABURO; TANAKA TOSHIO; KUME ICHIRO
	1987-06-23
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1987139376A
国家	日本
文献子类	发明申请
其他题名	Structure of semiconductor laser
英文摘要	PURPOSE:To attain a high output while keeping a basic lateral mode by making a refractive index of a first layer larger than that of a second layer by forming a groove in an epitaxial wafer on which a number of epitaxial growth layers are formed in a manner its bottom reaches the first layer among current blocks which is in contact with a substrate. CONSTITUTION:On a P-type GaAs substrate 17, a P-type AlyGa1-yAs layer (first layer) 16, an N-type AlzGa1-zAS layer (second layer) 25, an N-type GaAs layer (third layer) 15 are epitaxially grown, respectively. Further on the third layer 15, a P-type AlxGa1-xAs layer 14, an N-type AlxsiGa1-xsiAs layer 13, an N-type AletaGa1-eta layer 12 and an N-type GaAs layer 11 are epitaxially grown. The third layer 15 on the substrate 17 functions as a current block and a light absorbing layer of an epitaxial wafer 18 and the second layer 25 functions as a current block and a second waveguide. A depth of a groove 19 in the wafer 18 is formed in a manner it reaches a first layer 16 on the substrate 17 and a refractive index of the first layer 16 is made larger than that of the second layer 25, thereby providing the high output of a semiconductor laser.
公开日期	1987-06-23
申请日期	1985-12-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76107]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	TAKAMIYA SABURO,TANAKA TOSHIO,KUME ICHIRO. Structure of semiconductor laser. JP1987139376A. 1987-06-23.

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