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	Semiconductor laser element and manufacture thereof
	HORIKAWA HIDEAKI; KAWAI YOSHIO; FUKUNAGA TOSHIAKI; YAMADA TOMOYUKI
	1985-01-25
著作权人	OKI DENKI KOGYO KK
专利号	JP1985014487A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element and manufacture thereof
英文摘要	PURPOSE:To manufacture a semiconductor laser element in a refractive index guide structure having a current blocking layer by a liquid-phase epitaxial growth of one time utilizing that the growing speed of a liquid-phase epitaxial growth has a property to depend upon the orientation of plane. CONSTITUTION:A first clad layer 4 is grown on a current blocking layer 2 as well as on a {111} A plane 13, which forms a terrace side 13, by setting the supersaturation degree of growing solution to the second temperature, namely, such higher temperatures as more than about 10 deg.C. Accordingly, this first clad layer 4 become nearly parallel along planes 11 and 12 on the current blocking layer 2, but is curved along the plane 13 in the vicinity on the terrace side 13. Then, when an active layer 5 is grown on the clad layer 4, the active layer 5 is also curved in the vicinity on the terrace side 13. Accordingly, the difference of refractive index is made in a direction which is parallel to the terrace side, that is, the {111} A plane and perpendicular to the direction of the resonator. Then, a second clad layer 6 is grown, and after that, both electrodes 7 and 8 are provided by adhesion.
公开日期	1985-01-25
申请日期	1983-07-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76086]
专题	半导体激光器专利数据库
作者单位	OKI DENKI KOGYO KK
推荐引用方式 GB/T 7714	HORIKAWA HIDEAKI,KAWAI YOSHIO,FUKUNAGA TOSHIAKI,et al. Semiconductor laser element and manufacture thereof. JP1985014487A. 1985-01-25.

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