QQ客服 官方微博 反馈留言

	Semiconductor laser device
	ISSHIKI KUNIHIKO
	1991-10-09
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991228387A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To maintain a single-humped beam up to a high output and to obtain high reliability by providing no active stripe region due to Zn diffusion, etc., near a reflecting surface, and increasing the inhibited band width of a non- diffused region near the reflecting surface larger than a diffused region. CONSTITUTION:A light is guided via a waveguide formed of a refractive index difference in the lateral direction due to Zn diffusion and a refractive index difference between upper, lower clad layers 4, 2 and an active layer 3 in a resonator to form an array laser. On the other hand, the light is guided verti cally by a refractive index difference between the layers 4, 2 and the layer 3 in the vicinity of an edge in which no Zn is diffused, i.e., a non-diffused n-type window region 9, a guiding mechanism is not provided horizontally, and a diffraction coupling is formed. Further, the inhibited band width of the region 9 is increased larger than a p-type stripe region 8 in which Zn is diffused due to an acceptor order caused by Zn diffusion so that a laser light is not absorbed by the region 9.
公开日期	1991-10-09
申请日期	1990-02-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76036]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ISSHIKI KUNIHIKO. Semiconductor laser device. JP1991228387A. 1991-10-09.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。