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	Manufacture of semiconductor laser
	UESUGI FUMITO
	1990-11-30
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990291189A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To improve the accuracy of control of an active region by a method wherein a semiconductor laser is constituted in such a way that a film which is used as a diffusion source ts formed and after an opening part is formed in this film and the opening part is covered, an impurity is diffused from the film which is used as a diffusion source over a prescribed region of a semiconductor layer and the film used as a diffusion source becomes an insulating film. CONSTITUTION:An N-type AlxGa1-xAs layer 5, a quantum well active layer 6 and a P-type AlxGa1-xAs layer 7 are grown successively on an N-type GaAs substrate 4 and thereafter, an Si film 2 is formed on the whole surface of the layer 7. Then, the film 2 is selectively removed and after a contact hole 10 is formed, an Si3N4 film 18 is formed in such a way as to cover the film 2 and the hole 10 and this film 18 is selectively removed. Then, when a diffusion is performed, Si diffused regions 15 are formed on the sides of the end surfaces of the outside. At this time, Si is diffused in the layer 6, disordered regions 16 are formed and an active region 17 is formed between the regions 16. Then, after the film 18 is removed, a Ti-Au film is formed and the Ti-Au film is selectively removed to form an Ni-Au-Ge-Au film on the substrate 4. Whereupon, P and N electrodes 12 and 13 are formed. Thereby, the active region is formed in a self-alignment manner, the high-accuracy active region is obtained and the manufacture of a highly reliable semiconductor laser becomes possible.
公开日期	1990-11-30
申请日期	1989-04-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75895]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	UESUGI FUMITO. Manufacture of semiconductor laser. JP1990291189A. 1990-11-30.

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