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	Semiconductor laser element
	SASAKI YOSHIMITSU; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU
	1984-10-11
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1984178786A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To contrive to make assembly work efficient by facilitating the discrimination of the direction for stem mounting by a method wherein a sign, figure, and pattern, etc. discriminating one end surface are arranged on one electrode surface of the titled element. CONSTITUTION:A GaAlAs double hetero grown layer 2 is grown on an N type GaAs substrate 1, a P type electrode 3 is provided on the layer 2, and an N type electrode 4 is provided on the opposite surface of the substrate 1, thus constructing a wafer of the semiconductor laser. One electrode 3 of this wafer is coated with photo resist OMR (trade name), and exposure and development are performed by means of a photo mask having a marker 10 for discrimination, resulting in the state that only the part of the marker 10 has come off. Only the part of the marker 10 of this wafer is removed by etching, and a stripe 5 is formed by cleavage, thereby constructing the semiconductor laser 1 When the laser 11 is built on the stem 24, it is mounted between a low reflection film 21 and a high reflection film 22 on a sub-mount 23 according to the marker 10, and accordingly the assembly work is improved.
公开日期	1984-10-11
申请日期	1983-03-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75851]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	SASAKI YOSHIMITSU,KAJIMURA TAKASHI,KAYANE NAOKI,et al. Semiconductor laser element. JP1984178786A. 1984-10-11.

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