Manufacture of semiconductor laser | |
HAMADA TAKESHI; ITOU KUNIO; WADA MASARU | |
1984-12-20 | |
著作权人 | MATSUSHITA DENKI SANGYO KK |
专利号 | JP1984227182A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser |
英文摘要 | PURPOSE:To obtain a uniform active layer by a method wherein, when a first N type GaAlAs clad layer, which constitutes a semiconductor laser, is formed, a dopant for the clad layer and its concentration and growth temperature are specified. CONSTITUTION:Two ridges, which are parallel to each other at an interval, are formed on the surface of an N type GaAs substrate 1 and a first N type Ga0.57Al0.43As clad layer 2 is epitaxially grown on the total surface including the whole surfaces of the two ridges. Then, an undoped Ga0.92Al0.08As active layer 3, a second P type Ga0.57Al0.43As clad layer 4 and an N type GaAs cap layer 5 are laminatedly formed thereon and the whole surface of the layer 5 is covered with an insulating film 9. A window is opened corresponding to the space between the ridges, a Zn is diffused, a P type region 8, which intrudes in the layer 4, is provided and a P type electrode film 6 is coated while being made to abot against the region 8. In this constitution, a Te is used as a dopant for the layer 2 and its concentration and growth temperature are respectively set at 2X10-2X10/cm and 800-870 deg.C. |
公开日期 | 1984-12-20 |
申请日期 | 1983-06-08 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/75832] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA DENKI SANGYO KK |
推荐引用方式 GB/T 7714 | HAMADA TAKESHI,ITOU KUNIO,WADA MASARU. Manufacture of semiconductor laser. JP1984227182A. 1984-12-20. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论