QQ客服 官方微博 反馈留言

	Manufacture of semiconductor laser
	HAMADA TAKESHI; ITOU KUNIO; WADA MASARU
	1984-12-20
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1984227182A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To obtain a uniform active layer by a method wherein, when a first N type GaAlAs clad layer, which constitutes a semiconductor laser, is formed, a dopant for the clad layer and its concentration and growth temperature are specified. CONSTITUTION:Two ridges, which are parallel to each other at an interval, are formed on the surface of an N type GaAs substrate 1 and a first N type Ga0.57Al0.43As clad layer 2 is epitaxially grown on the total surface including the whole surfaces of the two ridges. Then, an undoped Ga0.92Al0.08As active layer 3, a second P type Ga0.57Al0.43As clad layer 4 and an N type GaAs cap layer 5 are laminatedly formed thereon and the whole surface of the layer 5 is covered with an insulating film 9. A window is opened corresponding to the space between the ridges, a Zn is diffused, a P type region 8, which intrudes in the layer 4, is provided and a P type electrode film 6 is coated while being made to abot against the region 8. In this constitution, a Te is used as a dopant for the layer 2 and its concentration and growth temperature are respectively set at 2X10-2X10/cm and 800-870 deg.C.
公开日期	1984-12-20
申请日期	1983-06-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75832]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	HAMADA TAKESHI,ITOU KUNIO,WADA MASARU. Manufacture of semiconductor laser. JP1984227182A. 1984-12-20.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。