QQ客服 官方微博 反馈留言

	Semiconductor laser element
	HAYAKAWA TOSHIROU; MIYAUCHI NOBUYUKI; YANO MORICHIKA
	1984-01-28
著作权人	SHARP KK
专利号	JP1984017292A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To reduce the influence of stress generated according to mounting, and to obtain the GaAlAs semiconductor laser element by a method wherein an active layer in a multilayer crystal is formed separating by the prescribed distances or more respectively from the mounting face and a face on the opposite side from the mounting face. CONSTITUTION:After a current limiting N type GaAs layer 9 of 1mum thickness is made to grow on a P type GaAs substrate 1, a V-shaped groove 10 to reach the substrate 1 is processed by etching. A P type clad layer 2 of 0.15mum thickness. the active layer 3 of 0.1mum thickness, an N type clad layer 4 of 1mum thickness, and an N type GaAs cap layer 5 of 40mum thickness are laminated in order thereon. After the GaAs substrate 1 is processed to 70mum thickness by etching, an electrode 11 on the P-side is formed, and moreover after an electrode 12 on the N-side is formed by evaporation on the cap layer 5, the device is mounted on a copper heat sink. By separating the active layer from the mounting face by 35% or more of element thickness, or by 18% or more from the opposite face, stress generated according to mounting can be reduced, and long life can be obtained.
公开日期	1984-01-28
申请日期	1982-07-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75630]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	HAYAKAWA TOSHIROU,MIYAUCHI NOBUYUKI,YANO MORICHIKA. Semiconductor laser element. JP1984017292A. 1984-01-28.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。