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	半導体発光装置
	石橋 晃; 森 芳文
	1996-09-05
著作权人	ソニー株式会社
专利号	JP2557040B2
国家	日本
文献子类	授权发明
其他题名	半導体発光装置
英文摘要	PURPOSE:To increase the degrees of freedom of the selection of materials and compositions, to widen a range of the selection of emission wavelengths and to obtain a stable light-emitting device with excellent reproducibility by alternately growing a plurality of mutually different substance layers consisting of a simple substance of eight atom layers or less each containing fractions or a binary compound semiconductor substance in an epitaxial manner. CONSTITUTION:Semiconductor layers having superlattice structure in which a plurality of mutually different substance layers L1-LN each composed of layers of eight atom layers or less (also containing fractions) are grown through a MOCVD method or a MBE method in succession at a plurality (M) of periods are shaped onto a single crystal substrate 10 consisting of GaAs, etc., thus constituting a light-emitting region in a semiconductor light-emitting device. Consequently, the arrangement of anions and cations is generated spatially uniformly, and stable luminous characteristics are acquired. Since a composition ratio as a whole is determined separately by the atomic layer ratios and lamination ratios of each substance layer, the degree of freedom of the selection of a component, the degree of the selection of the range of emission wavelengths, is increased. The degree of the selection of materials is improved by taking superlattice structure.
公开日期	1996-11-27
申请日期	1984-10-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75551]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	石橋 晃,森 芳文. 半導体発光装置. JP2557040B2. 1996-09-05.

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