| Group III nitride compound semiconductor light-emitting device | |
| KANEYAMA, NAOKI; ASAI, MAKOTO; SAWAZAKI, KATSUHISA | |
| 2001-10-10 | |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 专利号 | EP1041650A3 |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Group III nitride compound semiconductor light-emitting device |
| 英文摘要 | A cap layer of GaN about 140Å thick and a p-type clad layer of Mg-doped p-type AlxGa1-xN (x=0.12)about 200Å thick are formed successively on an MQW active layer about 230Å thick. A p-type contact layer of Mg-doped p-type AlyGa1-yN (y=0.05) about 600Å thick is further formed thereon. These composition ratios x and y are selected to satisfy the expression "0.03 ≦0.3x≦y≦0.5x≦0.08", so that the composition of the p-type contact layer becomes close to the composition of the p-type clad layer. |
| 公开日期 | 2001-10-10 |
| 申请日期 | 2000-03-09 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75538]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | KANEYAMA, NAOKI,ASAI, MAKOTO,SAWAZAKI, KATSUHISA. Group III nitride compound semiconductor light-emitting device. EP1041650A3. 2001-10-10. |
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