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	1977-09-28
著作权人	-
专利号	JP1977038393B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	A semiconductor laser device having an enclosed laser cavity is disclosed. The semiconductor laser is of the heterostructure type and embodiments of single and double heterostructures are disclosed. In both of the heterostructure devices disclosed, the side surfaces of the active region are well defined. This is accomplished, in one instance, by surrounding the laser active region on all side surfaces with a higher band gap material which also has a lower index of refraction. Thus, the laser cavity is partially enclosed by a semiconductor material on one conductivity type of a band gap higher than the band gap of the material of the laser cavity. The remaining portion is enclosed by a band gap material higher than the material of the laser cavity but is of opposite conductivity type to the first mentioned higher band gap material. In another instance the side surfaces of the laser active region are partially surrounded by a high band gap material and partially by a region of opposite conductivity type to the active region; both of which regions contribute carriers to the active region. The laser devices disclosed are made, for example, from layers of appropriately doped P and N type gallium arsenide and from layers of P and N type gallium aluminum arsenide. The resulting devices can have very small cavity cross sections, optical and electrical confinement of the excitation at all the side surfaces, low electrical series resistance and a low thermal resistance due to geometrical factors.
公开日期	1977-09-28
申请日期	1974-03-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/75015]
专题	半导体激光器专利数据库
作者单位	-
推荐引用方式 GB/T 7714	-. -. JP1977038393B2. 1977-09-28.

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