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	Semiconductor laser device
	NAKASHIMA HISAO; UMEDA JIYUNICHI; KURODA IKUROU; KASHIMURA TAKASHI
	1982-10-20
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1982170583A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a laser which discharges in lateral and longitudinal modes manner from an active region by mutually interfering laser lights from active regions aligned at a suitable interval. CONSTITUTION:An n type Ga0.7Al0.3As 2 and no-additive GaAs 3 are grown on an n-GaAs substrate 1, ruggedness is formed on the layer 3, an interval from the adjacent active region is set less than 5mum, and laser lights immersed to the outside of the active region are mutually interfered. A p type Ga0.7Al0.3As 4 is laminated on the layer 3, an AuGeNi 6 is attached to the substrate 1 side, and a Cr-Au 6 is attached onto the layer 4, is cleaved and scribed, thereby completing a laser. According to this structure, the laser oscillation at every active region can be maintained by the mutual interference of the laser lights in the same wavelength in the prescribed relation of the phases. Further, since the active regions are plural, large power operation can be performed.
公开日期	1982-10-20
申请日期	1981-04-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74992]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	NAKASHIMA HISAO,UMEDA JIYUNICHI,KURODA IKUROU,et al. Semiconductor laser device. JP1982170583A. 1982-10-20.

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