Optical semiconductor apparatus | |
HATORI, NOBUAKI; ISHIZAKA, MASASHIGE; SHIMIZU, TAKANORI | |
2016-01-12 | |
著作权人 | NEC CORPORATION |
专利号 | US9235000 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Optical semiconductor apparatus |
英文摘要 | An optical semiconductor device includes a silicon oxide layer configured to be formed on a substrate; an optical waveguide part configured to be formed on the silicon oxide layer; a cladding layer configured to be formed covering the optical waveguide part; and a semiconductor laser configured to be disposed on the substrate. Laser light emitted from the semiconductor laser enters the optical waveguide part. The optical waveguide part increases transmittance of light when the wavelength becomes greater within an oscillation wavelength range of the semiconductor laser. |
公开日期 | 2016-01-12 |
申请日期 | 2014-03-12 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/74937] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORPORATION |
推荐引用方式 GB/T 7714 | HATORI, NOBUAKI,ISHIZAKA, MASASHIGE,SHIMIZU, TAKANORI. Optical semiconductor apparatus. US9235000. 2016-01-12. |
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