QQ客服 官方微博 反馈留言

	Manufacture of semiconductor laser device
	YAGI TETSUYA
	1988-09-29
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988233589A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To simplify the manufacturing process, by growing a current blocking layer on a first contact layer and a second clad layer, thereafter growing a second contact layer on the current blocking layer, and embedding both sides of the plane (111) A of a ridge part. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4, a third clad layer 15 and a first contact layer 16 are sequentially grown on a semiconductor substrate Thereafter, the first contact layer 16 and the third clad layer 15 are selectively removed. A ridge part 17 having a plane (111) A is formed on both side surfaces thereof. A current blocking layer 18 is grown on the first contact layer 16 and the second clad layer 4 so that the layer 18 is not directly grown on the plane (111) A but separated. Thereafter, a second contact layer 19 is grown on the current blocking layer 19, and both sides of the of the plane (111) A of the ridge part 17 are embedded.
公开日期	1988-09-29
申请日期	1987-03-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74884]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	YAGI TETSUYA. Manufacture of semiconductor laser device. JP1988233589A. 1988-09-29.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。