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	Semiconductor laser
	OGITA SHOICHI
	1989-12-14
著作权人	FUJITSU LTD
专利号	JP1989310586A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To make a light intensity distribution flat in a direction of a resonator when the resonator is made larger in length by a method wherein at least an active layer is provided through the whole length of the laser resonator in a light travelling direction and a distributed feedback diffraction grating formed along the active layer is contained only in a central part of the resonator. CONSTITUTION:A part of a diffraction grating 3 near an end face of a distributed-feedback semiconductor laser is removed or the diffraction grating 3 is provided only to a central part of the semiconductor laser, and the semiconductor laser is so structured that an active layer is provided through the whole length of a resonator. Thereby, a light intensity distribution of a laser of this design conforms to that of a laser structure that two types of lasers, a Fabry-Pelot laser and a distributed-feedback laser, are combined and is uniform as shown in in a figure (B), and the laser of this design is small in a spectral line width and operates stably at a high output without causing a multi-wavelength oscillation. And, as the laser is formed to be the same in structure toward a light travelling direction, when an optical output increases, the laser is free from such problems as a multi-wavelength oscillation and a leap in wavelength which used to occur in a conventional type of laser that a laser region provided with an active layer and a waveguide path provided with no active layer are integrated, so that a stable oscillation of laser rays with a single wavelength and a small spectral line width can be realized.
公开日期	1989-12-14
申请日期	1988-06-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74834]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	OGITA SHOICHI. Semiconductor laser. JP1989310586A. 1989-12-14.

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