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	半導体レーザの製造方法
	浅賀 達也
	1997-04-18
著作权人	セイコーエプソン株式会社
专利号	JP2629722B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザの製造方法
英文摘要	PURPOSE:To form window regions having a large energy gap, to eliminate the deterioration of the end surface of a resonator and to obtain a long-lived semiconductor laser, which is large in the maximum output, by a method wherein ultraviolet light is irradiated on the window regions alone during the growth of the compound semiconductor thin film of an active layer region formed by an MOCVD method. CONSTITUTION:A buffer layer 103, a clad layer 104, an active layer 109, a clad layer 105, a cap layer 106 and a blocking layer 107 are laminatedly formed in order on an N-type GaAs substrate 102 by an MOCVD method. When the layer 109 is formed, ultraviolet light of an average photo output of 0.1-30 W/cm is irradiated on the vicinities of cleavage planes. Whereupon, as the decomposition efficiencies of organic metal materials of a TMG, a TMA and so on, which are made by an MOCVD method, are different from each other on the light irradiation parts alone, Al0.2Ga0.3As layers 110 containing a high percentage of Al are formed on the vicinities alone of the cleavage planes. After then, the layer 107 is etched in a striped form to form P-type and N-type ohmic electrodes 108 and 101, a cleavage is performed in the vicinities of the above light irradiation parts to form a resonator and a gain guide type semiconductor laser is obtained.
公开日期	1997-07-16
申请日期	1987-08-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74664]
专题	半导体激光器专利数据库
作者单位	セイコーエプソン株式会社
推荐引用方式 GB/T 7714	浅賀 達也. 半導体レーザの製造方法. JP2629722B2. 1997-04-18.

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