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	Semiconductor laser
	TOMITA AKIHISA
	1992-02-19
著作权人	NEC CORP
专利号	JP1992049690A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To restrain a refractive index from being changed by the vibration of free carriers by a method wherein the lattice constant of a semiconductor layer constituting a well layer is made smaller than the lattice constant of a semiconductor layer constituting a barrier layer and the energy of an optical transition between light holes and electrons is made lower than the energy of an optical transition between heavy holes and electrons and a TM beam is oscillated. CONSTITUTION:The following are laminated sequentially on an n-type InP substrate 11: an n-type InP clad layer 12; an n-type InGaAsP mixed-crystal light-confinement layer 13; an active layer 14 for a quantum well in which four layers as barrier layers 141 composed of an undoped InGaAsP mixed crystal and having a thickness of 10nm and well layers 142 composed of an undoped In0.3Ga0.7As mixed crystal and having a thickness of 7.5nm are laminated alternately; a p-type InGaAsP mixed-crystal light confinement layer 15; a p-type InP clad layer 16; and a p-type InGaAsP mixed-crystal contact layer 17. After that, a mesa etching operation is executed; an Fe-doped InP current-blocking layer 18 is buried. Lastly, electrodes 19, 20 are formed. The composition of the well layers is decided in such a way that the lattice constant of the well layers 142 is smaller than that of the barrier layers 14
公开日期	1992-02-19
申请日期	1990-06-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74633]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	TOMITA AKIHISA. Semiconductor laser. JP1992049690A. 1992-02-19.

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