Semiconductor laser device | |
OTA YOICHIRO | |
1990-08-03 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1990196488A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To provide a stable, excellent characteristics device with a reduced memory effect and without a remote junction by providing a first undercladding layer that has high impurity concentration and a second undercladding layer that has low impurity concentration. CONSTITUTION:N-type dopant H2Se conspicuously exhibits a phenomenon called a memory effect where adhering gas to a reaction tube, etc., is freed little by little even after gas supply is stopped, and is incorporated into a growing crystal. To prevent this, the n type dopant H2Se gas is supplied in an increased flow rate during the growth of a first undercladding layer 2 while being supplied in a reduced flow rate during the growth of a second undercladding layer 3. Hereby, a undercladding layer composed of the high impurity concentration first undercladding layer 2 and the low impurity concentration second undercladding layer 3. A P-N junction is located at an interface between the active layer 4 and the second undercladding layer 3 or in the active layer 4, and is not formed in the upper cladding layer 5. Thus, desired characteristics can be realized. |
公开日期 | 1990-08-03 |
申请日期 | 1989-01-24 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/74616] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | OTA YOICHIRO. Semiconductor laser device. JP1990196488A. 1990-08-03. |
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