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	Semiconductor laser device
	OTA YOICHIRO
	1990-08-03
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990196488A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To provide a stable, excellent characteristics device with a reduced memory effect and without a remote junction by providing a first undercladding layer that has high impurity concentration and a second undercladding layer that has low impurity concentration. CONSTITUTION:N-type dopant H2Se conspicuously exhibits a phenomenon called a memory effect where adhering gas to a reaction tube, etc., is freed little by little even after gas supply is stopped, and is incorporated into a growing crystal. To prevent this, the n type dopant H2Se gas is supplied in an increased flow rate during the growth of a first undercladding layer 2 while being supplied in a reduced flow rate during the growth of a second undercladding layer 3. Hereby, a undercladding layer composed of the high impurity concentration first undercladding layer 2 and the low impurity concentration second undercladding layer 3. A P-N junction is located at an interface between the active layer 4 and the second undercladding layer 3 or in the active layer 4, and is not formed in the upper cladding layer 5. Thus, desired characteristics can be realized.
公开日期	1990-08-03
申请日期	1989-01-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74616]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	OTA YOICHIRO. Semiconductor laser device. JP1990196488A. 1990-08-03.

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